/*
 * mcu_flash.c
 *
 *  Created on: Dec 8, 2025
 *      Author: cc
 */

#include "includes.h"
#include <string.h>

E_MCU_DEV_INFO g_mcu_dev;
G_SYS_FEATURE_T g_app_feature;      //APP特征区

uint8_t g_flash_buff[570] = {0};

/*******************************************************************************
* Function Name  : EEPROM_Init
* Description    : EEPROM 初始化函数
*******************************************************************************/
__attribute__((section(".non_0_wait"))) void EEPROM_Init(void)
{
    uint8_t rev = 0;

    rev = EEPROM_ReadMCUDevInfo(&g_mcu_dev);
    if(rev == 0x00){
        //读取成功，开始校验以下参数
        EEPROM_Validate_MCUDevInfo(&g_mcu_dev);
    }else{
        //读取失败，恢复默认参数
        Dbg_Println(DBG_BIT_SYS_STATUS_bit,"EE Use Defalut Para");
        EEPROM_Default_MCUDevInfo(&g_mcu_dev);

        Dbg_Println(DBG_BIT_SYS_STATUS_bit,"EE DevBootVer:%d",g_mcu_dev.dev_boot_ver);
        Dbg_Println(DBG_BIT_SYS_STATUS_bit,"EE DevNameLen:%d",g_mcu_dev.dev_name_len);
        Dbg_Println(DBG_BIT_SYS_STATUS_bit,"EE DevName:%s",g_mcu_dev.dev_name);
    }
}

/*******************************************************************************
* Function Name  : MCU_Flash_Write
* Description    : MCU Flash数据写入函数
* Input          :
        pBuffer：写入数据
        NumByteToWrite：写入数据长度 -- 写入长度必须为4的倍速
        writeAddr：写入地址      0x00004000 ~ 0x0006FFFF     432KB
*******************************************************************************/
__attribute__((section(".non_0_wait"))) uint8_t MCU_APP_Flash_Write(uint8_t* pBuffer,uint16_t NumByteToWrite,uint32_t writeAddr)
{
    FLASH_Status sta;

    /* 校验写入地址和长度是否符合条件 - 写入地址及长度是否在APP Flash范围内以及写入长度是否满足4Byte对齐*/
    if( ( writeAddr < MCU_APP_Flash_Start_Addr ) || ( ( writeAddr + NumByteToWrite ) > MCU_EEPROM_Start_Addr ) || ((NumByteToWrite % 4) != 0x00) )   {
        Dbg_Println(DBG_BIT_SYS_STATUS_bit,"MCU APP Flash Addr Error:%x - %x\r\n", writeAddr, NumByteToWrite);
        return 0x01;
    }

    FLASH_Unlock();
    sta = FLASH_ROMA_WRITE(writeAddr, pBuffer, NumByteToWrite);
    FLASH_Lock();
    if (sta != FLASH_COMPLETE){
        Dbg_Println(DBG_BIT_SYS_STATUS_bit,"Operation FLASH_ROMA_WRITE failed %#x!! Err Code %x\r\n", writeAddr, sta);
        return 0x01;
    }

    sta = FLASH_ROMA_VERIFY(writeAddr, pBuffer, NumByteToWrite);
    if (sta != FLASH_COMPLETE){
        Dbg_Println(DBG_BIT_SYS_STATUS_bit,"Operation FLASH_ROMA_VERIFY failed %#x!! Err Code %x\r\n", writeAddr, sta);
        return 0x01;
    }

    return 0x00;
}

/*******************************************************************************
* Function Name  : MCU_Flash_Read
* Description    : MCU Flash数据读取函数
* Input          :
        pBuffer：写入数据
        NumByteToWrite：写入数据长度 -- 写入长度必须为4的倍速
        readAddr：读取地址      0x00004000 ~ 0x0006FFFF     432KB
*******************************************************************************/
__attribute__((section(".non_0_wait"))) uint8_t MCU_APP_Flash_Read(uint8_t* pBuffer,uint16_t NumByteToWrite,uint32_t readAddr)
{
    FLASH_Status sta;

    /* 校验读取地址和长度是否符合条件 - 读取地址及长度是否在APP Flash范围内*/
    if( ( readAddr < MCU_APP_Flash_Start_Addr ) || ( ( readAddr + NumByteToWrite ) > MCU_EEPROM_Start_Addr )  )   {
        Dbg_Println(DBG_BIT_SYS_STATUS_bit,"MCU APP Flash Addr Error:%x - %x\r\n", readAddr, NumByteToWrite);
        return 0x01;
    }

    sta = FLASH_ROMA_READ(readAddr, pBuffer, NumByteToWrite);

    if (sta != FLASH_COMPLETE){
        Dbg_Println(DBG_BIT_SYS_STATUS_bit,"Operation FLASH_ROMA_READ failed %x!! Err Code %x\r\n", readAddr, sta);
        return 0x01;
    }

    return 0x00;
}

/*******************************************************************************
* Function Name  : MCU_APP_Flash_Erase
* Description    : MCU Flash数据擦除函数
* Input          :
        pBuffer：写入数据
        NumByteToWrite：写入数据长度 -- 写入长度必须为4的倍速
        readAddr：读取地址      0x00004000 ~ 0x0006FFFF     432KB
*******************************************************************************/
__attribute__((section(".non_0_wait"))) uint8_t MCU_APP_Flash_Erase(uint32_t readAddr,uint16_t NumByteToWrite)
{
    FLASH_Status sta;

    /* 校验读取地址和长度是否符合条件 - 读取地址及长度是否在APP Flash范围内*/
    if( ( readAddr < MCU_APP_Flash_Start_Addr ) || ( ( readAddr + NumByteToWrite ) > MCU_EEPROM_Start_Addr )  )   {
        Dbg_Println(DBG_BIT_SYS_STATUS_bit,"MCU EEPROM Addr Error:%x - %x\r\n", readAddr, NumByteToWrite);
        return 0x01;
    }

    FLASH_Unlock();
    sta = FLASH_ROMA_ERASE(readAddr, NumByteToWrite);
    FLASH_Lock();

    if (sta != FLASH_COMPLETE){
        Dbg_Println(DBG_BIT_SYS_STATUS_bit,"Operation FLASH_ROMA_ERASE failed %x!! Err Code %x\r\n", readAddr, sta);
        return 0x01;
    }

    return 0x00;
}

/*******************************************************************************
* Function Name  : MCU_APP_Flash_ALLErase
* Description    : MCU Flash擦除函数 - APP所有区域(包括APP特征区)
*******************************************************************************/
__attribute__((section(".non_0_wait"))) uint8_t MCU_APP_Flash_ALLErase(void)
{
    FLASH_Status sta;

    for(uint32_t i=MCU_APP_Flash_Start_Addr;i<MCU_APP_Flash_End_Addr;i+=MCU_APP_Flash_PageSize)
    {
        Dbg_Println(DBG_BIT_SYS_STATUS_bit,"Operation FLASH_ROMA_ERASE - %x!! \r\n", i);
        FLASH_Unlock();
        sta = FLASH_ROMA_ERASE(i, MCU_APP_Flash_PageSize);
        FLASH_Lock();

        if (sta != FLASH_COMPLETE){
            Dbg_Println(DBG_BIT_SYS_STATUS_bit,"Operation FLASH_ROMA_ERASE failed %x!! Err Code %x\r\n", i, sta);
            return 0x01;
        }
    }

    return 0x00;
}

/*******************************************************************************
* Function Name  : MCU_EEPROM_Write
* Description    : MCU EEPROM数据写入函数
* Input          :
        pBuffer：写入数据
        NumByteToWrite：写入数据长度 -- 写入长度必须为4的倍速
        writeAddr：写入地址      0x00004000 ~ 0x0006FFFF     432KB
*******************************************************************************/
__attribute__((section(".non_0_wait"))) uint8_t MCU_EEPROM_Write(uint8_t* pBuffer,uint16_t NumByteToWrite,uint32_t writeAddr)
{
    FLASH_Status sta;

    /* 校验写入地址和长度是否符合条件 - 写入地址及长度是否在APP Flash范围内以及写入长度是否满足4Byte对齐*/
    if( ( writeAddr < MCU_EEPROM_Start_Addr ) || ( ( writeAddr + NumByteToWrite ) > MCU_EEPROM_End_Addr ) || ((NumByteToWrite % 4) != 0x00))   {
        Dbg_Println(DBG_BIT_SYS_STATUS_bit,"MCU EEPROM Addr Error:%x - %x\r\n", writeAddr, NumByteToWrite);
        return 0x01;
    }

    FLASH_Unlock();
    sta = EEPROM_WRITE(writeAddr, pBuffer, NumByteToWrite);
    FLASH_Lock();

    if (sta != FLASH_COMPLETE){
        Dbg_Println(DBG_BIT_SYS_STATUS_bit,"Operation FLASH_ROMA_WRITE failed %x!! Err Code %x\r\n", writeAddr, sta);

        return 0x01;
    }

    return 0x00;
}

/*******************************************************************************
* Function Name  : MCU_EEPROM_Read
* Description    : MCU EEPROM数据读取函数
* Input          :
        pBuffer：写入数据
        NumByteToWrite：写入数据长度 -- 写入长度必须为4的倍速
        readAddr：读取地址      0x00004000 ~ 0x0006FFFF     432KB
*******************************************************************************/
__attribute__((section(".non_0_wait"))) uint8_t MCU_EEPROM_Read(uint8_t* pBuffer,uint16_t NumByteToWrite,uint32_t readAddr)
{
    FLASH_Status sta;

    /* 校验读取地址和长度是否符合条件 - 读取地址及长度是否在APP Flash范围内*/
    if( ( readAddr < MCU_EEPROM_Start_Addr ) || ( ( readAddr + NumByteToWrite ) > MCU_EEPROM_End_Addr )  )   {
        Dbg_Println(DBG_BIT_SYS_STATUS_bit,"MCU EEPROM Addr Error:%x - %x\r\n", readAddr, NumByteToWrite);
        return 0x01;
    }

    sta = EEPROM_READ(readAddr, pBuffer, NumByteToWrite);

    if (sta != FLASH_COMPLETE){
        Dbg_Println(DBG_BIT_SYS_STATUS_bit,"Operation FLASH_ROMA_READ failed %x!! Err Code %x\r\n", readAddr, sta);
        return 0x01;
    }

    return 0x00;
}

/*******************************************************************************
* Function Name  : MCU_EEPROM_Erase
* Description    : MCU EEPROM数据擦除函数
* Input          :
        eraseAddr：擦除地址  0x70000 -- 0x77FFF
        length：只能按照块擦除，块大小为4096
*******************************************************************************/
__attribute__((section(".non_0_wait"))) uint8_t MCU_EEPROM_Erase(uint32_t eraseAddr,uint16_t length)
{
    FLASH_Status sta;

    /* 校验读取地址和长度是否符合条件 - 读取地址及长度是否在APP Flash范围内 */
    if( ( eraseAddr < MCU_EEPROM_Start_Addr ) || ( ( eraseAddr + length ) > MCU_EEPROM_End_Addr )  )   {
        Dbg_Println(DBG_BIT_SYS_STATUS_bit,"MCU EEPROM Addr Error:%x - %x\r\n", eraseAddr, length);
        return 0x01;
    }

    FLASH_Unlock();
    sta = EEPROM_ERASE(eraseAddr, length);
    FLASH_Lock();

    if (sta != FLASH_COMPLETE){
        Dbg_Println(DBG_BIT_SYS_STATUS_bit,"Operation MCU_EEPROM_Erase failed %x!! Err Code %x\r\n", eraseAddr, sta);
        return 0x01;
    }

    return 0x00;
}

/*******************************************************************************
* Function Name  : MCU_EEPROM_ALLErase
* Description    : MCU Flash擦除函数 - EEPROM所有区域
*******************************************************************************/
__attribute__((section(".non_0_wait"))) uint8_t MCU_EEPROM_ALLErase(void)
{
    FLASH_Status sta;

    for(uint32_t i=MCU_EEPROM_Start_Addr;i<MCU_EEPROM_End_Addr;i+=MCU_APP_Flash_PageSize)
    {
        FLASH_Unlock();
        sta = EEPROM_ERASE(i, MCU_APP_Flash_PageSize);
        FLASH_Lock();

        if (sta != FLASH_COMPLETE){
            Dbg_Println(DBG_BIT_SYS_STATUS_bit,"Operation FLASH_ROMA_ERASE failed %x!! Err Code %x\r\n", i, sta);
            return 0x01;
        }
    }

    return 0x01;
}

/*******************************************************************************
* Function Name  : EEPROM_CheckSum
* Description    : EEPROM 校验函数
*******************************************************************************/
__attribute__((section(".non_0_wait"))) uint8_t EEPROM_CheckSum(uint8_t *data,uint16_t len)
{
    uint8_t data_sum = 0;

    for(uint16_t i = 0;i<len;i++)
    {
        data_sum += data[i];
    }
    return data_sum;
}

/*******************************************************************************
* Function Name  : EEPROM_ReadMCUDevInfo
* Description    : 从EEPROM中读取设备信息
*******************************************************************************/
__attribute__((section(".non_0_wait"))) uint8_t EEPROM_ReadMCUDevInfo(E_MCU_DEV_INFO *info)
{
    uint16_t read_len = 0;
    uint32_t read_addr = MCU_EEPROM_MCUDevInfo_Address;

    memset(Temp_Flash_Buff,0,sizeof(Temp_Flash_Buff));

    Dbg_Println(DBG_BIT_SYS_STATUS_bit,"EEPROM_READ : %x ",read_addr);

    Dbg_Println(DBG_BIT_SYS_STATUS_bit,"EEPROM_READ 1");

//    FLASH_Unlock();
//    EEPROM_ERASE(read_addr , 0x1000);
//    FLASH_Lock();

    Dbg_Println(DBG_BIT_SYS_STATUS_bit,"EEPROM_READ 2");

    EEPROM_READ(read_addr,Temp_Flash_Buff,1024);

    Dbg_Print_Buff(DBG_BIT_SYS_STATUS_bit,"Dev Info:",Temp_Flash_Buff,4);

    if(Temp_Flash_Buff[0] == EEPROM_SVAE_FLAG){
        read_len = Temp_Flash_Buff[2];
        read_len <<= 8;
        read_len |= Temp_Flash_Buff[1];

        Dbg_Println(DBG_BIT_SYS_STATUS_bit,"read_len : %d ",read_len);

        if(read_len <= EEPROM_DATA_Size_Max){
            Dbg_Println(DBG_BIT_SYS_STATUS_bit,"read_para %0x%x\r\n",MCU_EEPROM_MCUDevInfo_Address);

            //EEPROM_READ(MCU_EEPROM_MCUDevInfo_Address,g_read_buff,1024);

            Dbg_Print_Buff(DBG_BIT_SYS_STATUS_bit,"Dev Info Para:",&Temp_Flash_Buff[4],read_len);

            if(EEPROM_CheckSum(&Temp_Flash_Buff[4],sizeof(E_MCU_DEV_INFO)) == Temp_Flash_Buff[3]){
                //校验成功
                memcpy((uint8_t *)info,Temp_Flash_Buff,sizeof(E_MCU_DEV_INFO));

                Dbg_Println(DBG_BIT_SYS_STATUS_bit,"EE DevAddr:%d",info->dev_addr);
                Dbg_Println(DBG_BIT_SYS_STATUS_bit,"EE DevType:%d",info->dev_type);
                Dbg_Println(DBG_BIT_SYS_STATUS_bit,"EE DevBootVer:%d",info->dev_boot_ver);
                Dbg_Println(DBG_BIT_SYS_STATUS_bit,"EE DevAppVer:%d",info->dev_app_ver);
                Dbg_Println(DBG_BIT_SYS_STATUS_bit,"EE DevNameLen:%d",info->dev_name_len);
                Dbg_Println(DBG_BIT_SYS_STATUS_bit,"EE DevName:%s",info->dev_name);

                return 0x00;
            }
        }
    }

    return 0x01;
}

/*******************************************************************************
* Function Name  : EEPROM_WriteMCUDevInfo
* Description    : 将设备信息写入到EEPROM中
*******************************************************************************/
__attribute__((section(".non_0_wait"))) uint8_t EEPROM_WriteMCUDevInfo(E_MCU_DEV_INFO *info)
{
    uint8_t save_data[EEPROM_DATA_Size_Max + 6];
    uint16_t save_len = sizeof(E_MCU_DEV_INFO);

    if(save_len >= EEPROM_DATA_Size_Max) save_len = EEPROM_DATA_Size_Max;

    save_data[0] = EEPROM_SVAE_FLAG;
    save_data[1] = save_len & 0xFF;
    save_data[2] = (save_len >> 8) & 0xFF;

    memcpy(&save_data[4],(uint8_t *)info,save_len);

    save_data[3] = EEPROM_CheckSum(&save_data[4],save_len);

    save_len+=4;

    MCU_EEPROM_Write(save_data,save_len,MCU_EEPROM_MCUDevInfo_Address);

    return 0;
}

/*******************************************************************************
* Function Name  : EEPROM_Default_MCUDevInfo
* Description    : EEPROM中参数恢复默认值，且将默认参数保存至EEPROM中
*******************************************************************************/
__attribute__((section(".non_0_wait"))) void EEPROM_Default_MCUDevInfo(E_MCU_DEV_INFO *info)
{
#if (Project_Area == 0x01)
    /*Boot 区域*/
    info->dev_addr = 0x00;
    info->dev_type = 0x00;
    info->dev_app_ver = 0x00;
    info->dev_boot_ver = Project_FW_Version;
    info->dev_name_len = sizeof(Peoject_Name);

    memset((char *)info->dev_name,0,EEPROM_DEV_NAME_Size);
    memcpy((char *)info->dev_name,(char *)Peoject_Name,info->dev_name_len);

    //EEPROM_WriteMCUDevInfo(info);
#elif (Project_Area == 0x02)
    /*APP 区域*/
    info->dev_addr = 0x00;
    info->dev_type = Project_Type;
    info->dev_app_ver = Project_FW_Version;
    info->dev_name_len = sizeof(Peoject_Name);

    memset((char *)info->dev_name,0,EEPROM_DEV_NAME_Size);
    memcpy((char *)info->dev_name,(char *)Peoject_Name,info->dev_name_len);

    EEPROM_WriteMCUDevInfo(info);
#endif
}

/*******************************************************************************
* Function Name  : EEPROM_Validate_MCUDevInfo
* Description    : 校验从EEPROM 中读取的参数是否正确，如果不正确的话，便将当前正确的参数写入
        APP区域中，判断APP参数与EEPROM中记录的是否一致
        Boot区域中，判断Boot参数与EEPROM中记录的是否一致
*******************************************************************************/
__attribute__((section(".non_0_wait"))) void EEPROM_Validate_MCUDevInfo(E_MCU_DEV_INFO *info)
{
#if (Project_Area == 0x01)
    /*Boot 区域*/
    uint8_t save_flag = 0;

    if(info->dev_boot_ver != Project_FW_Version)
    {
        info->dev_boot_ver = Project_FW_Version;
        save_flag = 0x01;
    }

    if(save_flag == 0x01)
    {
        EEPROM_WriteMCUDevInfo(info);
    }
#elif (Project_Area == 0x02)
    /*APP 区域*/
    U8_T save_flag = 0;

    if(info->dev_app_ver != Project_FW_Version)
    {
        info->dev_app_ver = Project_FW_Version;
        save_flag = 0x01;
    }

    if(info->dev_type != Project_Type)
    {
        info->dev_type = Project_Type;
        save_flag = 0x01;
    }

    if(info->dev_name_len != sizeof(Peoject_Name))
    {
        info->dev_name_len = sizeof(Peoject_Name);
        save_flag = 0x01;
    }

    if(strncmp((char *)info->dev_name,(char *)Peoject_Name,sizeof(Peoject_Name)))
    {
        memcpy((char *)info->dev_name,(char *)Peoject_Name,info->dev_name_len);
        save_flag = 0x01;
    }

    if(save_flag == 0x01)
    {
        EEPROM_WriteMCUDevInfo(info);
    }
#endif
}

/*******************************************************************************
* Function Name  : Read_APP_Feature_Info
* Description    : 读取APP特征区
*******************************************************************************/
__attribute__((section(".non_0_wait"))) uint8_t Read_APP_Feature_Info(uint8_t option,G_SYS_FEATURE_T *feature_info)
{
    uint16_t crc_val = 0,crc_val2 = 0;
    uint32_t temp_val = 0;
    memset(Temp_Flash_Buff,0,sizeof(Temp_Flash_Buff));

    if(option == 0x01){
        //读取MCU Flash APP特征区
        MCU_APP_Flash_Read(Temp_Flash_Buff,APP_FEATURE_SIZE,MCU_APP_Feature_Addr);
    }else if(option == 0x02){
        //读取外部 Flash APP特征区
        Flash_Read(Temp_Flash_Buff,APP_FEATURE_SIZE,SPIFLASH_APP_FEATURE_Addr);
    }

    Dbg_Print_Buff(DBG_BIT_SYS_STATUS_bit,"APP Feature :",Temp_Flash_Buff,APP_FEATURE_SIZE);

    crc_val = Temp_Flash_Buff[1];
    crc_val <<= 0x08;
    crc_val |= Temp_Flash_Buff[0];

    crc_val2 = NetCRC16_2(&Temp_Flash_Buff[2],510);
    Dbg_Println(DBG_BIT_SYS_STATUS_bit,"%s CRC: %x - %x",__func__,crc_val,crc_val2);

    if(crc_val == crc_val2)
    {
        /*数据校验通过*/
        feature_info->app_flag = Temp_Flash_Buff[Feature_AppFlag];

        temp_val = Temp_Flash_Buff[Feature_AppStart + 3];
        temp_val <<= 8;
        temp_val |= Temp_Flash_Buff[Feature_AppStart + 2];
        temp_val <<= 8;
        temp_val |= Temp_Flash_Buff[Feature_AppStart + 1];
        temp_val <<= 8;
        temp_val |= Temp_Flash_Buff[Feature_AppStart];
        feature_info->app_start_addr = temp_val;

        temp_val = Temp_Flash_Buff[Feature_AppEnd + 3];
        temp_val <<= 8;
        temp_val |= Temp_Flash_Buff[Feature_AppEnd + 2];
        temp_val <<= 8;
        temp_val |= Temp_Flash_Buff[Feature_AppEnd + 1];
        temp_val <<= 8;
        temp_val |= Temp_Flash_Buff[Feature_AppEnd];
        feature_info->app_end_addr = temp_val;

        temp_val = Temp_Flash_Buff[Feature_AppCrcSize + 1];
        temp_val <<= 8;
        temp_val |= Temp_Flash_Buff[Feature_AppCrcSize];
        feature_info->app_crc_size = temp_val;

        temp_val = Temp_Flash_Buff[Feature_AppCrcLen + 1];
        temp_val <<= 8;
        temp_val |= Temp_Flash_Buff[Feature_AppCrcLen];
        feature_info->app_crc_len = temp_val;

        memcpy(feature_info->app_crc,&Temp_Flash_Buff[Feature_AppFlashCrc],APP_Feature_CRC_Size);

        /*校验数据是否处于正常范围*/
        if( ( feature_info->app_start_addr < MCU_APP_Flash_Start_Addr ) || ( feature_info->app_start_addr > MCU_APP_Data_End_Addr ) ){
            Dbg_Println(DBG_BIT_SYS_STATUS_bit,"%s app_start_addr:0x%x Error",__func__, feature_info->app_start_addr);
            return 0x02;
        }

        if( ( feature_info->app_end_addr > MCU_APP_Data_End_Addr ) || ( feature_info->app_start_addr > feature_info->app_end_addr ) ){
            Dbg_Println(DBG_BIT_SYS_STATUS_bit,"%s app_end_addr:0x%x - 0x%x Error",__func__,feature_info->app_start_addr,feature_info->app_end_addr);
            return 0x02;
        }

        if( feature_info->app_crc_size != MCU_APP_Flash_PageSize ){
            Dbg_Println(DBG_BIT_SYS_STATUS_bit,"%s app_crc_size:%#x Error",__func__,feature_info->app_crc_size);
            return 0x02;
        }

        return 0x00;
    }

    return 0x01;
}

/*******************************************************************************
* Function Name  : Write_APP_Feature_Info
* Description    : 写入APP特征区
*******************************************************************************/
__attribute__((section(".non_0_wait"))) uint8_t Write_APP_Feature_Info(uint8_t option,G_SYS_FEATURE_T *feature_info)
{
    uint8_t rev = 0;

    memset(Temp_Flash_Buff,0,sizeof(Temp_Flash_Buff));
    memset(g_flash_buff,0,sizeof(g_flash_buff));

    g_flash_buff[Feature_AppFlag] = feature_info->app_flag;

    g_flash_buff[Feature_AppStart] = feature_info->app_start_addr & 0xFF;
    g_flash_buff[Feature_AppStart + 1] = ( feature_info->app_start_addr >> 8 ) & 0xFF;
    g_flash_buff[Feature_AppStart + 2] = ( feature_info->app_start_addr >> 16 ) & 0xFF;
    g_flash_buff[Feature_AppStart + 3] = ( feature_info->app_start_addr >> 24 ) & 0xFF;

    g_flash_buff[Feature_AppEnd] = feature_info->app_end_addr & 0xFF;
    g_flash_buff[Feature_AppEnd + 1] = ( feature_info->app_end_addr >> 8 ) & 0xFF;
    g_flash_buff[Feature_AppEnd + 2] = ( feature_info->app_end_addr >> 16 ) & 0xFF;
    g_flash_buff[Feature_AppEnd + 3] = ( feature_info->app_end_addr >> 24 ) & 0xFF;

    g_flash_buff[Feature_AppCrcSize] = feature_info->app_crc_size & 0xFF;
    g_flash_buff[Feature_AppCrcSize + 1] = ( feature_info->app_crc_size >> 8 ) & 0xFF;

    g_flash_buff[Feature_AppCrcLen] = feature_info->app_crc_len & 0xFF;
    g_flash_buff[Feature_AppCrcLen + 1] = ( feature_info->app_crc_len >> 8 ) & 0xFF;

    memcpy(&g_flash_buff[Feature_AppFlashCrc],feature_info->app_crc,APP_Feature_CRC_Size);

    feature_info->crc_check = NetCRC16_2(&g_flash_buff[2], 510);

    g_flash_buff[Feature_Check] = feature_info->crc_check & 0xFF;
    g_flash_buff[Feature_Check + 1] = ( feature_info->crc_check >> 8 ) & 0xFF;

    if(option == 0x01){
        //读取MCU Flash APP特征区     由于特征区大小为512Byte，mcu flash 每次写入都必须块写入以及块擦除 4096byte
        /*写特征区 - 1、先读取块数据*/

        MCU_APP_Flash_Read(Temp_Flash_Buff,MCU_APP_Flash_PageSize,MCU_APP_Feature_PageAddr);

        memcpy(&Temp_Flash_Buff[MCU_APP_Feature_PageOffset],g_flash_buff,512);

        /*写特征区 - 2、擦除块内容*/
        rev = MCU_APP_Flash_Erase(MCU_APP_Feature_PageAddr,MCU_APP_Flash_PageSize);

        if(rev != 0x00) {
            Dbg_Println(DBG_BIT_SYS_STATUS_bit,"MCU_APP_Flash_Erase Fail:%d %x - %x",rev,MCU_APP_Feature_PageAddr,MCU_APP_Flash_PageSize);
            return 0x01;
        }

        /*写特征区 - 3、写入块内容*/
        rev = MCU_APP_Flash_Write(Temp_Flash_Buff,MCU_APP_Flash_PageSize,MCU_APP_Feature_PageAddr);

        if(rev != 0x00) {
            Dbg_Println(DBG_BIT_SYS_STATUS_bit,"MCU_APP_Flash_Write Fail:%d %#x - %#x",rev,MCU_APP_Feature_PageAddr,MCU_APP_Flash_PageSize);
            return 0x02;
        }

        /*写特征区 - 4、校验写入块内容*/
        rev = FLASH_ROMA_VERIFY(MCU_APP_Feature_PageAddr,Temp_Flash_Buff,MCU_APP_Flash_PageSize);
        if(rev != 0x00) {
            Dbg_Println(DBG_BIT_SYS_STATUS_bit,"FLASH_ROMA_VERIFY Fail:%d %#x - %#x",rev,MCU_APP_Feature_PageAddr,MCU_APP_Flash_PageSize);
            return 0x03;
        }

    }else if(option == 0x02){
        //读取外部 Flash APP特征区
        Dbg_Print_Buff(DBG_BIT_SYS_STATUS_bit,"SPI Flash Para:",g_flash_buff,APP_FEATURE_SIZE);

        Flash_Write(g_flash_buff,APP_FEATURE_SIZE,SPIFLASH_APP_FEATURE_Addr);
    }

    return 0x00;
}

/*******************************************************************************
* Function Name  : APP_Feature_Info_Printf
* Description    : APP特征区数据打印
*******************************************************************************/
__attribute__((section(".non_0_wait"))) void APP_Feature_Info_Printf(G_SYS_FEATURE_T *feature_info)
{
    Dbg_Println(DBG_BIT_SYS_STATUS_bit,"Feature crc_check: %x \r\n",feature_info->crc_check);
    Dbg_Println(DBG_BIT_SYS_STATUS_bit,"Feature app_flag: %x \r\n",feature_info->app_flag);

    Dbg_Println(DBG_BIT_SYS_STATUS_bit,"Feature app_start_addr: %x \r\n",feature_info->app_start_addr);
    Dbg_Println(DBG_BIT_SYS_STATUS_bit,"Feature app_end_addr: %x \r\n",feature_info->app_end_addr);
    Dbg_Println(DBG_BIT_SYS_STATUS_bit,"Feature app_crc_len: %d \r\n",feature_info->app_crc_len);
    Dbg_Print_Buff(DBG_BIT_SYS_STATUS_bit,"Feature app_crc:",feature_info->app_crc,471);
}