cc8783e9f8
修改事项： 1、新增TFTP IAP升级功能，只是代码移植完毕，没有测试使用 2、代码空间编译优化，零等待区域空间已满，而应用层代码已全部挪移到非零等待区域中，但还是会增加零等待区的空间占用。 待优化
122 lines
5.2 KiB
C
122 lines
5.2 KiB
C
/*
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* mcu_flash.h
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*
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* Created on: Dec 8, 2025
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* Author: cc
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*/
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#ifndef MCU_DRIVER_INC_MCU_FLASH_H_
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#define MCU_DRIVER_INC_MCU_FLASH_H_
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#include "ch564.h"
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#include <stdint.h>
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#define MCU_APP_Flash_PageSize 0x00001000 //MCU Flash页为4096Byte
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#define APP_Flash_WriteNum 0x05 //APP写入次数
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#define App_Procedure_Ready 0x66 //APP准备就绪标志位
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#define App_Procedure_Not_Ready 0x44 //App未准备就绪标志位
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//MCU Flash Address range(0x0 -- 0x6FFFF) Size(448K)
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#define MCU_APP_Flash_Start_Addr 0x00007000 //MCU Flash中APP的起始地址
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#define MCU_APP_Data_Start_Addr 0x00007000 //MCU Flash APP数据起始地址
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#define MCU_APP_Data_End_Addr 0x00027DFF //MCU Flash APP数据结束地址
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#define MCU_APP_Feature_Addr 0x00027E00 //MCU Flash 特征区数据保存地址
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#define MCU_APP_Flash_End_Addr 0x00027FFF //MCU Flash中APP的结束地址
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#define MCU_APP_Feature_PageAddr 0x00027000 //MCU APP特征区 所在页的地址
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#define MCU_APP_Feature_PageOffset 0x00000E00 //MCU APP特征区所在页的偏移量
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#define APP_FEATURE_SIZE 0x0200 //512Byte
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//EEPROM Address range(0x70000 -- 0x77FFF) Size(32K)
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#define MCU_EEPROM_Start_Addr 0x00070000
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#define MCU_EEPROM_MCUDevInfo_Address 0x00070000 //MCU 设备信息地址固定为0x00070000，大小为4096 此区域不可改动
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#define MCU_EEPROM_End_Addr 0x00078000
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/* EEPROM 保存数据格式：
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* FLAG - 1Byte 保存标志位
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* LEN - 2Byte 保存数据长度
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* CHECK - 1Byte 保存数据校验
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* DATA - nByte 保存数据内容
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*
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* */
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#define EEPROM_SVAE_FLAG 0xAE
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#define EEPROM_DATA_Size_Max 0x40 //目前保存数据内容最长为100Byte
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#define EEPROM_PARA_Size 50
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#define EEPROM_DEV_NAME_Size 32
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#define EEPROM_Offset_SaveFlag 0x00
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#define EEPROM_Offset_Datalen 0x01
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#define EEPROM_Offset_Check 0x03
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#define EEPROM_Offset_Data 0x04
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/* 特征区数据结构体
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* 注意：由于risc-v环境，没有字节对齐操作
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* 所以保存至Flash/MCU Flash中的顺序与结构体定义顺序不一致，使用时需注意
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* */
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typedef enum{
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Feature_Check = 0x00, //特征区 512Byte 的CRC校验 - 2Byte
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Feature_AppFlag = 0x02, //特征区 - APP标志位 - 1Byte
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Feature_AppStart = 0x03, //特征区 - APP起始地址 - 4Byte
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Feature_AppEnd = 0x07, //特征区 - APP结束地址 - 4Byte
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Feature_AppCrcSize = 0x0B, //特征区 - APP CRC的长度 - 2Byte
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Feature_AppCrcLen = 0x0D, //特征区 - APP CRC校验的数据大小 - 2Byte
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Feature_AppFlashCrc = 0x0F, //特征区 - APP CRC
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}FEATURE_E;
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#define APP_Feature_CRC_Size 497
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typedef struct{
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uint8_t app_flag; //APP 标志位
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uint8_t app_crc[APP_Feature_CRC_Size]; //APP CRC校验值
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uint16_t app_crc_size; //APP CRC校验的数据大小
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uint16_t app_crc_len; //APP CRC校验的数据长度
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uint16_t crc_check; //特征区数据CRC值 - 用于校验特征区数据是否合法
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uint32_t app_start_addr; //APP起始地址
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uint32_t app_end_addr; //APP结束地址
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}G_SYS_FEATURE_T;
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/*该信息存放于MCU EEPROM区域中*/
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typedef struct{
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uint8_t dev_addr; //设备地址
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uint8_t dev_type; //设备类型
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uint8_t dev_boot_ver; //设备Boot的软件版本号
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uint8_t dev_app_ver; //设备APP的软件版本号
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uint8_t dev_name_len; //设备名称的长度
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uint8_t dev_name[EEPROM_DEV_NAME_Size]; //设备名称
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}E_MCU_DEV_INFO;
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extern E_MCU_DEV_INFO g_mcu_dev;
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extern G_SYS_FEATURE_T g_app_feature;
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extern uint8_t g_flash_buff[570];
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void EEPROM_Init(void);
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uint8_t MCU_APP_Flash_Write(uint8_t* pBuffer,uint16_t NumByteToWrite,uint32_t writeAddr);
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uint8_t MCU_APP_Flash_Read(uint8_t* pBuffer,uint16_t NumByteToWrite,uint32_t readAddr);
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uint8_t MCU_APP_Flash_Erase(uint32_t readAddr,uint16_t NumByteToWrite);
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uint8_t MCU_APP_Flash_ALLErase(void);
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uint8_t MCU_EEPROM_Write(uint8_t* pBuffer,uint16_t NumByteToWrite,uint32_t writeAddr);
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uint8_t MCU_EEPROM_Read(uint8_t* pBuffer,uint16_t NumByteToWrite,uint32_t readAddr);
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uint8_t MCU_EEPROM_Erase(uint32_t readAddr,uint16_t NumByteToWrite);
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uint8_t MCU_EEPROM_ALLErase(void);
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uint8_t EEPROM_CheckSum(uint8_t *data,uint16_t len);
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uint8_t EEPROM_ReadMCUDevInfo(E_MCU_DEV_INFO *info);
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uint8_t EEPROM_WriteMCUDevInfo(E_MCU_DEV_INFO *info);
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void EEPROM_Default_MCUDevInfo(E_MCU_DEV_INFO *info);
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void EEPROM_Validate_MCUDevInfo(E_MCU_DEV_INFO *info);
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uint8_t Read_APP_Feature_Info(uint8_t option,G_SYS_FEATURE_T *feature_info);
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uint8_t Write_APP_Feature_Info(uint8_t option,G_SYS_FEATURE_T *feature_info);
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void APP_Feature_Info_Printf(G_SYS_FEATURE_T *feature_info);
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#endif /* MCU_DRIVER_INC_MCU_FLASH_H_ */
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